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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Corsair CMW64GX4M4D3600C18 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Corsair CMW64GX4M4D3600C18 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Corsair CMW64GX4M4D3600C18 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
30
左右 3% 更低的延时
需要考虑的原因
Corsair CMW64GX4M4D3600C18 16GB
报告一个错误
更快的读取速度,GB/s
17.6
13.4
测试中的平均数值
更快的写入速度,GB/s
15.4
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Corsair CMW64GX4M4D3600C18 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
30
读取速度,GB/s
13.4
17.6
写入速度,GB/s
9.0
15.4
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2423
3672
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Corsair CMW64GX4M4D3600C18 16GB RAM的比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR32D4S2S1ME-8 8GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD32GX4M2B3000C15 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 9965589-006.E00G 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Essencore Limited KD48GS88C-32N2200 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston XK2M26-MIE-NX 16GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905678-042.A00G 8GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-8GTZSK 8GB
Samsung 1600 CL10 Series 8GB
DSL Memory D4SS12081SH21A-A 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Essencore Limited IM48GU48N24-FFFHM 8GB
AMD R5316G1609U2K 8GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471A1K43BB1-CTD 8GB
Kingston 99U5474-013.A00LF 2GB
Kingston XJ69DF-MIE 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
报告一个错误
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Bug description
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