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Samsung M471B5173DB0-YK0 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Samsung M471B5173DB0-YK0 4GB vs InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB 需要考虑的原因
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 45
    左右 -96% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 23
  • 读取速度，GB/s
    12.0 left arrow 16.6
  • 写入速度，GB/s
    7.8 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 3169

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Golden Empire CL18-20-20 D4-3600 8GB
Golden Empire CL18-20-20 D4-3600 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Super Talent F26UB16GH 16GB
Super Talent F26UB16GH 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Teikon TMA851S6CJR6N-VKSC 4GB
Teikon TMA851S6CJR6N-VKSC 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
内存RAM
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Crucial Technology CT32G48C40U5.M16A1 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Apacer Technology 78.CAGP7.40C0B 8GB
Apacer Technology 78.CAGP7.40C0B 8GB
内存RAM