Samsung M471B5173DB0-YK0 4GB vs InnoDisk Corporation M4U0-8GSSKCSJ 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

需要考虑的原因
InnoDisk Corporation M4U0-8GSSKCSJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 45

左右 -41% 更低的延时
更快的读取速度，GB/s

16 12

测试中的平均数值
更快的写入速度，GB/s

10.5 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 32
读取速度，GB/s

12.0 16.0
写入速度，GB/s

7.8 10.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 2714

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX4GX3M2A1600C9 2GB

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Crucial Technology CT8G4SFS8266.M8FB 8GB

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Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

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Corsair CMZ16GX3M2A1866C9 8GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

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Kingston 9905403-447.A00LF 4GB

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V-Color Technology Inc. TA48G36S818BN 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMD16GX4M4B3200C15 4GB

Corsair CMD16GX4M4B3200C15 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB