Samsung M471B5173DB0-YK0 4GB vs Kingston 9905744-006.A00G 16GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Kingston 9905744-006.A00G 16GB

Kingston 9905744-006.A00G 16GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Kingston 9905744-006.A00G 16GB

需要考虑的原因
Kingston 9905744-006.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 45

左右 -32% 更低的延时
更快的读取速度，GB/s

14.7 12

测试中的平均数值
更快的写入速度，GB/s

12.0 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Kingston 9905744-006.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 34
读取速度，GB/s

12.0 14.7
写入速度，GB/s

7.8 12.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1939 2900

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF4G64HZ-2G6B2 32GB

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Samsung M471B5173DB0-YK0 4GB

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Kingston 9905744-006.A00G 16GB

Kingston 9905744-006.A00G 16GB

Samsung M471B5773DH0-CH9 2GB

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Team Group Inc. 16GB

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Kingston 9905403-444.A00LF 4GB

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G Skill Intl F4-3866C18-8GTZR 8GB

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Samsung 1600 CL10 Series 8GB

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Transcend Information JM2400HLB-8G 8GB

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Kingston 9905403-011.A03LF 2GB

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Kingston KHX2400C1C14/16G 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Transcend Information JM2666HLB-16G 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology CT8G4DFS8213.M8FB 8GB

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Kingston KVR800D2N6/2G 2GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMT32GX4M4K4000C19 8GB

Corsair CMT32GX4M4K4000C19 8GB