Samsung M471B5173DB0-YK0 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 73

左右 38% 更低的延时

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

报告一个错误

更快的读取速度，GB/s

15.1 12

测试中的平均数值
更快的写入速度，GB/s

7.9 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 73
读取速度，GB/s

12.0 15.1
写入速度，GB/s

7.8 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMK8GX4M1E3200C16 8GB

Corsair CMK8GX4M1E3200C16 8GB

Qimonda 72T128420EFA3SB2 1GB

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Corsair CMK32GX4M4C3000C15 8GB

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Crucial Technology CT8G4DFS824A.C8FJ 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

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