Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BLE4G4D32AEEA.K8FE 4GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

需要考虑的原因
Crucial Technology BLE4G4D32AEEA.K8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 45

左右 -73% 更低的延时
更快的读取速度，GB/s

22.9 12.3

测试中的平均数值
更快的写入速度，GB/s

17.7 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 26
读取速度，GB/s

12.3 22.9
写入速度，GB/s

8.0 17.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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Kingston 99U5428-063.A00LF 8GB

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Micron Technology 9ASF1G72AZ-2G3B1 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Corsair CMG32GX4M2E3200C16 16GB