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Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
比较
Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
45
左右 -96% 更低的延时
更快的读取速度,GB/s
17.8
12.3
测试中的平均数值
更快的写入速度,GB/s
14.0
8.0
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
23
读取速度,GB/s
12.3
17.8
写入速度,GB/s
8.0
14.0
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1992
3127
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Essencore Limited IM44GU48N21-FFFHM 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMW16GX4M2D3000C16 8GB
报告一个错误
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Bug description
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