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Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
比较
Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CT4G4DFS8213.C8FAD1 4GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
更快的读取速度,GB/s
12.3
11.9
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
45
左右 -50% 更低的延时
更快的写入速度,GB/s
10.0
8.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
30
读取速度,GB/s
12.3
11.9
写入速度,GB/s
8.0
10.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1992
2475
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905700-017.A00G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-4GTZB 4GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2400C17-8GVR 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C14-8GTZNB 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
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Kingston 9905702-006.A00G 8GB
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SK Hynix V-GeN D4H4GL26A8TL5 4GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
报告一个错误
×
Bug description
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