Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-3000C15-8GVKB 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

G Skill Intl F4-3000C15-8GVKB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 45

左右 -61% 更低的延时
更快的读取速度，GB/s

18.3 12.3

测试中的平均数值
更快的写入速度，GB/s

14.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3000C15-8GVKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 28
读取速度，GB/s

12.3 18.3
写入速度，GB/s

8.0 14.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F5-6400J3239G16G 16GB

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V-Color Technology Inc. TA48G36S818BNK 8GB

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A-DATA Technology DDR4 4133 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston ACR16D3LS1KNG/4G 4GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

Corsair CMZ16GX3M2A2400C10 8GB

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Samsung M378A1G43EB1-CRC 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

Crucial Technology CT16G4DFD8213.M16FB 16GB