Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-3466C18-8GTZRXB 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

G Skill Intl F4-3466C18-8GTZRXB 8GB

需要考虑的原因
G Skill Intl F4-3466C18-8GTZRXB 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 45

左右 -165% 更低的延时
更快的读取速度，GB/s

20.9 12.3

测试中的平均数值
更快的写入速度，GB/s

16.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 17
读取速度，GB/s

12.3 20.9
写入速度，GB/s

8.0 16.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Ramaxel Technology RMSA3230KB78HAF2133 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 16G2666CL19 16GB

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Samsung M471B5173DB0-YK0 4GB

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Crucial Technology CT16G4SFRA32A.C8FE 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M393B5270CH0-CH9 4GB

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Essencore Limited KD4AGS88A-26N1600 16GB

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Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston HP24D4R7D4MAM-32 32GB

Kingston HP24D4R7D4MAM-32 32GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Apacer Technology 78.DAGP2.4030B 16GB

Apacer Technology 78.DAGP2.4030B 16GB