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TwinMOS 8DHE3MN8-HATP 2GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

TwinMOS 8DHE3MN8-HATP 2GB vs Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 14.1
    测试中的平均数值
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB 需要考虑的原因
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 87
    左右 -142% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 36
  • 读取速度，GB/s
    3,155.6 left arrow 15.9
  • 写入速度，GB/s
    870.4 left arrow 14.1
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    417 left arrow 3121

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KHX2400C15/16G 16GB
Kingston KHX2400C15/16G 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KY7N41-MIE 8GB
Kingston KY7N41-MIE 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMT32GX4M2C3466C16 16GB
Corsair CMT32GX4M2C3466C16 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905701-141.A00G 16GB
Kingston 9905701-141.A00G 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Essencore Limited KD48GU880-26N160T 8GB
Essencore Limited KD48GU880-26N160T 8GB
内存RAM