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Samsung M471B5173QH0-YK0 4GB
Lexar Co Limited LD4AS008G-H2666GST 8GB

Samsung M471B5173QH0-YK0 4GB vs Lexar Co Limited LD4AS008G-H2666GST 8GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Lexar Co Limited LD4AS008G-H2666GST 8GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Lexar Co Limited LD4AS008G-H2666GST 8GB 需要考虑的原因
Lexar Co Limited LD4AS008G-H2666GST 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 45
    左右 -55% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 29
  • 读取速度，GB/s
    12.3 left arrow 15.8
  • 写入速度，GB/s
    8.0 left arrow 10.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 2708

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Lexar Co Limited LD4AS008G-H2666GST 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Samsung M471B5173QH0-YK0 4GB
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Lexar Co Limited LD4AS008G-H2666GST 8GB
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Nanya Technology M2Y51264TU88B0B-3C 512MB
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内存RAM
Crucial Technology CT102464BF160B.C16 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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