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Samsung M471B5173QH0-YK0 4GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB

Samsung M471B5173QH0-YK0 4GB vs Micron Technology 72ASS4G72LZ-2G1A1 32GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Micron Technology 72ASS4G72LZ-2G1A1 32GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.3 left arrow 8.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 7.7
    测试中的平均数值
Micron Technology 72ASS4G72LZ-2G1A1 32GB 需要考虑的原因
Micron Technology 72ASS4G72LZ-2G1A1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 45
    左右 -15% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 39
  • 读取速度，GB/s
    12.3 left arrow 8.8
  • 写入速度，GB/s
    8.0 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 2083

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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