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Samsung M471B5273CH0-CH9 4GB
Corsair CMD16GX4M2A2400C14 8GB

Samsung M471B5273CH0-CH9 4GB vs Corsair CMD16GX4M2A2400C14 8GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Corsair CMD16GX4M2A2400C14 8GB

Corsair CMD16GX4M2A2400C14 8GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Corsair CMD16GX4M2A2400C14 8GB 需要考虑的原因
Corsair CMD16GX4M2A2400C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 48
    左右 -118% 更低的延时
  • 更快的读取速度，GB/s
    18.6 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Corsair CMD16GX4M2A2400C14 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 22
  • 读取速度，GB/s
    8.9 left arrow 18.6
  • 写入速度，GB/s
    5.9 left arrow 13.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3220

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Corsair CMD16GX4M2A2400C14 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378A1K43EB2-CWE 8GB
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Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Kingston 9905403-090.A01LF 4GB
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Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK128GX4M8B3000C16 16GB
Corsair CMK128GX4M8B3000C16 16GB
内存RAM
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
Corsair CMD16GX4M4A2666C16 4GB
Corsair CMD16GX4M4A2666C16 4GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-2400C15-8GRR 8GB
G Skill Intl F4-2400C15-8GRR 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
内存RAM
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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