Samsung M471B5273CH0-CH9 4GB vs Corsair CMD16GX4M2B3200C14 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Corsair CMD16GX4M2B3200C14 8GB

Corsair CMD16GX4M2B3200C14 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Corsair CMD16GX4M2B3200C14 8GB

需要考虑的原因
Corsair CMD16GX4M2B3200C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 48

左右 -109% 更低的延时
更快的读取速度，GB/s

17 8.9

测试中的平均数值
更快的写入速度，GB/s

12.5 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Corsair CMD16GX4M2B3200C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 23
读取速度，GB/s

8.9 17.0
写入速度，GB/s

5.9 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 2963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology D12.2324WT.001 8GB

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EXCELERAM D48G8G8H8SS9CJRB22 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Corsair CMK64GX4M2D3600C18 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3466C16-8GTZR 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMW8GX4M1D3000C16 8GB

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Kingston 9905471-076.A00LF 8GB

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Kingston 9965589-031.D01G 2GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2400C17-8GSXK 8GB

G Skill Intl F4-2400C17-8GSXK 8GB