Samsung M471B5273CH0-CH9 4GB vs Corsair CMR64GX4M8C3200C16 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Corsair CMR64GX4M8C3200C16 8GB

Corsair CMR64GX4M8C3200C16 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Corsair CMR64GX4M8C3200C16 8GB

需要考虑的原因
Corsair CMR64GX4M8C3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 48

左右 -33% 更低的延时
更快的读取速度，GB/s

10.4 8.9

测试中的平均数值
更快的写入速度，GB/s

12.8 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Corsair CMR64GX4M8C3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 36
读取速度，GB/s

8.9 10.4
写入速度，GB/s

5.9 12.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 2587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905316-106.A02LF 1GB

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Corsair CMR64GX4M4C3333C16 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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Samsung M4 70T5663RZ3-CF7 2GB

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Samsung M471B1G73QH0-YK0 8GB

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Micron Technology 9ASF1G72PZ-2G3A1 8GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.BAGN8.40C0B 4GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Ramaxel Technology RMUA5090KB78HAF2133 8GB

Ramaxel Technology RMUA5090KB78HAF2133 8GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Kingston 99U5665-001.A00G 4GB

Kingston 99U5665-001.A00G 4GB

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Samsung M471B5773DH0-CH9 2GB

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Kingston 9965604-008.C00G 8GB