Samsung M471B5273CH0-CH9 4GB vs Crucial Technology BL16G36C16U4R.M16FE1 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Crucial Technology BL16G36C16U4R.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4R.M16FE1 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 48

左右 -85% 更低的延时
更快的读取速度，GB/s

17.7 8.9

测试中的平均数值
更快的写入速度，GB/s

14.9 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 26
读取速度，GB/s

8.9 17.7
写入速度，GB/s

5.9 14.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 3692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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G Skill Intl F4-4800C18-8GTRG 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3600C16-16GTRSC 16GB

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Samsung M471B5273CH0-CH9 4GB

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Kingston 9905403-156.A00LF 2GB

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Ramaxel Technology RMUA5110MH78HAF-2666 8GB

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Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

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Wilk Elektronik S.A. IRH3200D464L16/16G 16GB

Wilk Elektronik S.A. IRH3200D464L16/16G 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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A-DATA Technology AO2P24HCST2-BTVS 16GB