Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-2400C15-8GVR 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

G Skill Intl F4-2400C15-8GVR 8GB

G Skill Intl F4-2400C15-8GVR 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F4-2400C15-8GVR 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 48

左右 -50% 更低的延时
更快的读取速度，GB/s

16.4 8.9

测试中的平均数值
更快的写入速度，GB/s

11.9 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-2400C15-8GVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 32
读取速度，GB/s

8.9 16.4
写入速度，GB/s

5.9 11.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 2973

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology W642GU42J5213N 16GB

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PUSKILL DDR3 1600 8G 8GB

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V-GEN D4H4GL30A8TS5 4GB

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SK Hynix HMA82GS6CJR8N-XN 16GB

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SK Hynix HMA81GS6AFR8N-VK 8GB

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Crucial Technology CT8G4SFS8213.C8FDR1 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Kingston 9965604-008.C00G 8GB

Kingston 9965604-008.C00G 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Corsair CM4X8GF2666Z16K4 8GB

Corsair CM4X8GF2666Z16K4 8GB

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Kingston KHX2133C14D4/4G 4GB

Kingston KHX2133C14D4/4G 4GB