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Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB

Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-3200C16-16GTZRX 16GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
G Skill Intl F4-3200C16-16GTZRX 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZRX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 48
    左右 -78% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 27
  • 读取速度，GB/s
    8.9 left arrow 18.4
  • 写入速度，GB/s
    5.9 left arrow 15.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3711

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

G Skill Intl F4-3200C16-16GTZRX 16GB RAM的比较

Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 99U5469-045.A00LF 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
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Kingston 99U5428-063.A00LF 8GB
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Kingmax Semiconductor GZAG43F-18---------- 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Samsung M378B5273DH0-CH9 4GB
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内存RAM
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内存RAM
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内存RAM
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Corsair CMK16GX4M2K4266C19 8GB
内存RAM