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Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4600C18-8GTZR 8GB

Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-4600C18-8GTZR 8GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
G Skill Intl F4-4600C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4600C18-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 48
    左右 -118% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.3 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 22
  • 读取速度，GB/s
    8.9 left arrow 19.3
  • 写入速度，GB/s
    5.9 left arrow 17.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3653

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

G Skill Intl F4-4600C18-8GTZR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMR32GX4M2A2666C16 16GB
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A-DATA Technology DDR4 2400 16GB
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内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
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内存RAM
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内存RAM
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内存RAM
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Netac Technology Co Ltd E40832A 8GB
内存RAM
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PNY Electronics PNY 2GB
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G Skill Intl F4-2400C15-8GRR 8GB
内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
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G Skill Intl F4-3200C16-8GTZRX 8GB
内存RAM