Samsung M471B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 48

左右 -78% 更低的延时
更快的读取速度，GB/s

11.4 8.9

测试中的平均数值
更快的写入速度，GB/s

11.8 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 27
读取速度，GB/s

8.9 11.4
写入速度，GB/s

5.9 11.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2062

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CMK16GX4M2C3000C15 8GB

Corsair CMK16GX4M2C3000C15 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMK64GX4M4B3000C15 16GB

Corsair CMK64GX4M4B3000C15 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Kingston 9905701-131.A00G 16GB

Kingston 9905701-131.A00G 16GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BL16G32C16S4B.16FE 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMK64GX4M8X4000C19 8GB

Corsair CMK64GX4M8X4000C19 8GB

Samsung M392B1G73BH0-YK0 8GB

Samsung M392B1G73BH0-YK0 8GB

Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston 99U5702-094.A00G 8GB

Kingston 99U5702-094.A00G 8GB