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Samsung M471B5273CH0-CH9 4GB
Kingston 9905744-027.A00G 16GB

Samsung M471B5273CH0-CH9 4GB vs Kingston 9905744-027.A00G 16GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Kingston 9905744-027.A00G 16GB

Kingston 9905744-027.A00G 16GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Kingston 9905744-027.A00G 16GB 需要考虑的原因
Kingston 9905744-027.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 48
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Kingston 9905744-027.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 46
  • 读取速度，GB/s
    8.9 left arrow 19.1
  • 写入速度，GB/s
    5.9 left arrow 15.3
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3168

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Kingston 9905744-027.A00G 16GB RAM的比较

A-DATA Technology AD4S3200316G22-BHYD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
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Micron Technology 16JSF25664HZ-1G1F1 2GB
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内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
SK Hynix HMA851U6CJR6N-UH 4GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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Crucial Technology BLS8G4D240FSA.M16FAD 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
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Gloway International (HK) STK4U2400D17082C 8GB
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内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
内存RAM
Corsair CM3X2G1600C9 2GB
Corsair CM3X2G1600C9 2GB
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Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
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Samsung M393A2K40BB1-CRC 16GB
内存RAM
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Avant Technology W6451U67J5213NB 4GB
Avant Technology W6451U67J5213NB 4GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Mushkin 99[2/7/4]190F 4GB
Mushkin 99[2/7/4]190F 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Samsung M471A1K43CB1-CTD 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-4600C18-8GTZR 8GB
G Skill Intl F4-4600C18-8GTZR 8GB
内存RAM