Samsung M471B5273CH0-CH9 4GB vs Kingston 99U5702-089.A00G 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Kingston 99U5702-089.A00G 8GB

Kingston 99U5702-089.A00G 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Kingston 99U5702-089.A00G 8GB

需要考虑的原因
Kingston 99U5702-089.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 48

左右 -60% 更低的延时
更快的读取速度，GB/s

17.3 8.9

测试中的平均数值
更快的写入速度，GB/s

13.2 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Kingston 99U5702-089.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 30
读取速度，GB/s

8.9 17.3
写入速度，GB/s

5.9 13.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 3267

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Apacer Technology 78.D2GF2.AU30B 16GB

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Crucial Technology CT4G4DFS8266.M8FF 4GB

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Kingston KVR800D2N6/2G 2GB

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SK Hynix HMAA1GU6CJR6N-XN 8GB

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Corsair CMW32GX4M2C3466C16 16GB

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A-DATA Technology DDR4 2400 16GB

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SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Kingston 99U5700-014.A00G 8GB

Kingston 99U5700-014.A00G 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

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Samsung M378A1G43DB0-CPB 8GB

A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB