Samsung M471B5273CH0-CH9 4GB vs Kingston KHX3466C16D4/16GX 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Kingston KHX3466C16D4/16GX 16GB

Kingston KHX3466C16D4/16GX 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Kingston KHX3466C16D4/16GX 16GB

需要考虑的原因
Kingston KHX3466C16D4/16GX 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 48

左右 -71% 更低的延时
更快的读取速度，GB/s

18.7 8.9

测试中的平均数值
更快的写入速度，GB/s

15.4 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Kingston KHX3466C16D4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 28
读取速度，GB/s

8.9 18.7
写入速度，GB/s

5.9 15.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 3705

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3600C18-32GVK 32GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Corsair CMK32GX4M4A2400C16 8GB

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AMD AE34G1601U1 4GB

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SK Hynix HMA81GU6DJR8N-XN 8GB

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Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

AMD R538G1601U2S-UO 8GB

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Micron Technology 8ATF2G64AZ-3G2E1 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Apacer Technology 78.DAGQ7.40B0B 16GB