Samsung M471B5273CH0-CH9 4GB vs Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 51

左右 6% 更低的延时

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 8.9

测试中的平均数值
更快的写入速度，GB/s

11.8 5.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 51
读取速度，GB/s

8.9 15.6
写入速度，GB/s

5.9 11.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1420 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW256GX4M8E3200C16 32GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M3 78T2863EHS-CF7 1GB

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Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

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Samsung M4 70T5663QZ3-CE6 2GB

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Crucial Technology CT8G4SFRA266.C4FE 8GB

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Samsung M471B5273CH0-CH9 4GB

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Panram International Corporation W4U2666P-8G 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology CT8G4DFS824A.M8FH3 8GB

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