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Samsung M471B5273DH0-CH9 4GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB

Samsung M471B5273DH0-CH9 4GB vs A-DATA Technology AM2P24HC8T1-BBFS 8GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
A-DATA Technology AM2P24HC8T1-BBFS 8GB

A-DATA Technology AM2P24HC8T1-BBFS 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
A-DATA Technology AM2P24HC8T1-BBFS 8GB 需要考虑的原因
A-DATA Technology AM2P24HC8T1-BBFS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 47
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 31
  • 读取速度，GB/s
    9.3 left arrow 16.2
  • 写入速度，GB/s
    5.9 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 2951

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

A-DATA Technology AM2P24HC8T1-BBFS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471B5273DH0-CH9 4GB
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内存RAM
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内存RAM
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内存RAM
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Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
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内存RAM
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PNY Electronics 4GBH2X02E99927-16 4GB
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G Skill Intl F4-3200C14-32GTRG 32GB
内存RAM
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Corsair CM3X8GA2400C11Y2R 8GB
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