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Samsung M471B5273DH0-CH9 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB

Samsung M471B5273DH0-CH9 4GB vs A-DATA Technology AM2P26KC8T1-BXRS 8GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
A-DATA Technology AM2P26KC8T1-BXRS 8GB 需要考虑的原因
A-DATA Technology AM2P26KC8T1-BXRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 29
  • 读取速度，GB/s
    9.3 left arrow 14.9
  • 写入速度，GB/s
    5.9 left arrow 10.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 2811

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Corsair CMK64GX5M2B5200C40 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9905471-074.A00LF 8GB
Corsair CMU16GX4M2D3200C16 8GB
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内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CM4X16GE2133C13K8 16GB
Corsair CM4X16GE2133C13K8 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3200C14-16GTZSW 16GB
G Skill Intl F4-3200C14-16GTZSW 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3400C16-8GTZ 8GB
G Skill Intl F4-3400C16-8GTZ 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMW16GX4M2K4000C19 8GB
Corsair CMW16GX4M2K4000C19 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-4000C15-8GTZR 8GB
G Skill Intl F4-4000C15-8GTZR 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
内存RAM