PNY Electronics PNY 2GB vs Chun Well Technology Holding Limited MD4U0836165BCW 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U0836165BCW 8GB

报告一个错误

更快的读取速度，GB/s

21.4 13.8

测试中的平均数值
更快的写入速度，GB/s

16.2 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.8 21.4
写入速度，GB/s

8.4 16.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 3809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Transcend Information JM2666HLG-16GK 8GB

Transcend Information JM2666HLG-16GK 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

Corsair CMZ16GX3M2A1866C10 8GB

Corsair CMZ16GX3M2A1866C10 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Lenovo LMKU8G68AHFHD-32A 8GB

Lenovo LMKU8G68AHFHD-32A 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

Corsair CMD8GX3M2A2800C12 4GB

Corsair CMD8GX3M2A2800C12 4GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Kingston 9965662-009.A00G 16GB

Kingston 9965662-009.A00G 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMD32GX4M4A2666C15 8GB

Corsair CMD32GX4M4A2666C15 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB