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Samsung M471B5273DH0-CH9 4GB
AMD R948G3206U2S 8GB

Samsung M471B5273DH0-CH9 4GB vs AMD R948G3206U2S 8GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
AMD R948G3206U2S 8GB

AMD R948G3206U2S 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
AMD R948G3206U2S 8GB 需要考虑的原因
AMD R948G3206U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 47
    左右 -31% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
AMD R948G3206U2S 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 36
  • 读取速度，GB/s
    9.3 left arrow 18.5
  • 写入速度，GB/s
    5.9 left arrow 12.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 3320

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

AMD R948G3206U2S 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CMD64GX4M8X4000C19 8GB
Corsair CMD64GX4M8X4000C19 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Essencore Limited KD4AGU880-32A160T 16GB
Essencore Limited KD4AGU880-32A160T 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3200C15-4GRKD 4GB
G Skill Intl F4-3200C15-4GRKD 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gloway International (HK) STK4U2400D17082C 8GB
Gloway International (HK) STK4U2400D17082C 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
AMD R948G3206U2S 8GB
AMD R948G3206U2S 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Samsung M471A1K1KBB1-CRC 8GB
Samsung M471A1K1KBB1-CRC 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMW128GX4M4D3600C18 32GB
Corsair CMW128GX4M4D3600C18 32GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2666C16D4/4G 4GB
Kingston KHX2666C16D4/4G 4GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BL16G26C16U4W.16FE 16GB
Crucial Technology BL16G26C16U4W.16FE 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905630-048.A00G 16GB
Kingston 9905630-048.A00G 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Apacer Technology 78.B1GN3.4032B 4GB
Apacer Technology 78.B1GN3.4032B 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M393A2K43BB1-CRC 16GB
Samsung M393A2K43BB1-CRC 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
内存RAM