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Samsung M471B5273DH0-CH9 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Samsung M471B5273DH0-CH9 4GB vs Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB 需要考虑的原因
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 47
    左右 -104% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.3 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 23
  • 读取速度，GB/s
    9.3 left arrow 14.4
  • 写入速度，GB/s
    5.9 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 2236

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHYXPX-HYJ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
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Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix HMA451S6AFR8N-TF 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Apacer Technology 78.B1GN3.4032B 4GB
Apacer Technology 78.B1GN3.4032B 4GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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G Skill Intl F4-3200C16-4GVRB 4GB
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Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Apacer Technology 78.CAGP7.AFW0C 8GB
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Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
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ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Apacer Technology 78.CAGP7.C7C0B 8GB
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Samsung M3 78T5663RZ3-CE6 2GB
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Kingston HP698651-154-MCN 8GB
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Crucial Technology BL16G32C16S4B.M16FE 16GB
内存RAM
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Kingston 9965525-144.A00LF 8GB
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Corsair CMK16GX4M4A2666C16 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Kingston KTD3KX-MIB 8GB
内存RAM
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SK Hynix HMT41GU7BFR8C-RD 8GB
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Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
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Micron Technology 16ATF2G64AZ-2G6E1 16GB
内存RAM