Samsung M471B5273DH0-CH9 4GB vs Corsair CM4B8G1J2400A16K2-O 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Corsair CM4B8G1J2400A16K2-O 8GB

Corsair CM4B8G1J2400A16K2-O 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Corsair CM4B8G1J2400A16K2-O 8GB

需要考虑的原因
Corsair CM4B8G1J2400A16K2-O 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 47

左右 -74% 更低的延时
更快的读取速度，GB/s

17.8 9.3

测试中的平均数值
更快的写入速度，GB/s

12.7 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Corsair CM4B8G1J2400A16K2-O 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 27
读取速度，GB/s

9.3 17.8
写入速度，GB/s

5.9 12.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1413 3129

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-156.A00LF 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston KHX2666C15/16GX 16GB

Kingston KHX2666C15/16GX 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

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G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB