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Samsung M471B5273DH0-CH9 4GB
Corsair CMK32GX4M4E4133C19 8GB

Samsung M471B5273DH0-CH9 4GB vs Corsair CMK32GX4M4E4133C19 8GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
Corsair CMK32GX4M4E4133C19 8GB

Corsair CMK32GX4M4E4133C19 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
Corsair CMK32GX4M4E4133C19 8GB 需要考虑的原因
Corsair CMK32GX4M4E4133C19 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 47
    左右 -114% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Corsair CMK32GX4M4E4133C19 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 22
  • 读取速度，GB/s
    9.3 left arrow 19.1
  • 写入速度，GB/s
    5.9 left arrow 14.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 3509

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Corsair CMK32GX4M4E4133C19 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMK32GX4M4E4133C19 8GB
Corsair CMK32GX4M4E4133C19 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kllisre M378A1K43BB2-CRC 8GB
Kllisre M378A1K43BB2-CRC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Gloway International (HK) STK4U2400D15082C 8GB
Gloway International (HK) STK4U2400D15082C 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK32GX4M4A2400C12 8GB
Corsair CMK32GX4M4A2400C12 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905701-022.A00G 16GB
Kingston 9905701-022.A00G 16GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Transcend Information JM3200HLB-16G 16GB
Transcend Information JM3200HLB-16G 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK32GX4M4A2133C15 8GB
Corsair CMK32GX4M4A2133C15 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5471-004.A01LF 4GB
Kingston 99P5471-004.A01LF 4GB
内存RAM