Samsung M471B5273DH0-CH9 4GB vs G Skill Intl F4-3000C14-16GVRD 16GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

G Skill Intl F4-3000C14-16GVRD 16GB

G Skill Intl F4-3000C14-16GVRD 16GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

G Skill Intl F4-3000C14-16GVRD 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GVRD 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 47

左右 -62% 更低的延时
更快的读取速度，GB/s

13.6 9.3

测试中的平均数值
更快的写入速度，GB/s

10.1 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3000C14-16GVRD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 29
读取速度，GB/s

9.3 13.6
写入速度，GB/s

5.9 10.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 2891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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Corsair CML8GX3M2A1600C9 4GB

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Corsair CM4X16GC3200C16K4 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston HP698651-154-MCN 8GB

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Kingston 9905624-016.A00G 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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A-DATA Technology DQKD1A08 1GB

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G Skill Intl F4-4000C14-8GTZR 8GB

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Kingston 9905403-174.A00LF 2GB

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Kingston 99U5713-001.A00G 4GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Corsair CMR64GX4M8X3800C19 8GB

Corsair CMR64GX4M8X3800C19 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

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Crucial Technology CT16G4SFS8266.C8FE 16GB

Crucial Technology CT16G4SFS8266.C8FE 16GB