Samsung M471B5273DH0-CH9 4GB vs G Skill Intl F4-3000C16-16GSXKB 16GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

G Skill Intl F4-3000C16-16GSXKB 16GB

G Skill Intl F4-3000C16-16GSXKB 16GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

G Skill Intl F4-3000C16-16GSXKB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GSXKB 16GB

报告一个错误

低于PassMark测试中的延时，ns

45 47

左右 -4% 更低的延时
更快的读取速度，GB/s

16.6 9.3

测试中的平均数值
更快的写入速度，GB/s

11.7 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3000C16-16GSXKB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 45
读取速度，GB/s

9.3 16.6
写入速度，GB/s

5.9 11.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 3233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3000C16-16GSXKB 16GB

G Skill Intl F4-3000C16-16GSXKB 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston 9965667-001.A00G 16GB

Kingston 9965667-001.A00G 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

Kingmax Semiconductor KLDD48F-B8KW6 1GB

Kingmax Semiconductor KLDD48F-B8KW6 1GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB