Samsung M471B5273DH0-CH9 4GB vs Hyundai Inc GR26C16S8K2HU416 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Hyundai Inc GR26C16S8K2HU416 8GB

需要考虑的原因
Hyundai Inc GR26C16S8K2HU416 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 47

左右 -114% 更低的延时
更快的读取速度，GB/s

17.4 9.3

测试中的平均数值
更快的写入速度，GB/s

13.6 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Hyundai Inc GR26C16S8K2HU416 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 22
读取速度，GB/s

9.3 17.4
写入速度，GB/s

5.9 13.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1413 3182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F4-3600C17-16GTZKK 16GB

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Samsung M471B5273DH0-CH9 4GB

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Hyundai Inc GR26C16S8K2HU416 8GB

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AMD R5S38G1601U2S 8GB

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Avant Technology W642GU42J5213N 16GB

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Corsair CMT32GX4M4K4000C19 8GB

Corsair CMT32GX4M4K4000C19 8GB

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Kingston 9905403-156.A00LF 2GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

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A-DATA Technology DDR4 2666 8GB

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Corsair CMSX8GX4M1A2666C18 8GB

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Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Kingston ACR26D4U9S1KA-4 4GB

Kingston ACR26D4U9S1KA-4 4GB