Samsung M471B5273DH0-CH9 4GB vs Kingston 9905702-007.A00G 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Kingston 9905702-007.A00G 8GB

Kingston 9905702-007.A00G 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Kingston 9905702-007.A00G 8GB

需要考虑的原因
Kingston 9905702-007.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 47

左右 -18% 更低的延时
更快的读取速度，GB/s

12.8 9.3

测试中的平均数值
更快的写入速度，GB/s

7.2 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Kingston 9905702-007.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 40
读取速度，GB/s

9.3 12.8
写入速度，GB/s

5.9 7.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1413 1785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 2GB-DDR2 800Mhz 2GB

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Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

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G Skill Intl F4-3600C17-16GTZ 16GB

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Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Kingston 9965525-018.A00LF 4GB

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Kingston HX318C10FK/4 4GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB