Samsung M471B5273DH0-CH9 4GB vs Mushkin 99[2/7/4]190F 4GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Mushkin 99[2/7/4]190F 4GB

需要考虑的原因
Mushkin 99[2/7/4]190F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 47

左右 -81% 更低的延时
更快的读取速度，GB/s

14.1 9.3

测试中的平均数值
更快的写入速度，GB/s

10.7 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Mushkin 99[2/7/4]190F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 26
读取速度，GB/s

9.3 14.1
写入速度，GB/s

5.9 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 2679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Apacer Technology 78.DAGNN.4030B 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

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Kingston HP698651-154-MCN 8GB

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Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB