Samsung M471B5273DH0-CK0 4GB vs Corsair CMK32GX4M2C3200C18 16GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Corsair CMK32GX4M2C3200C18 16GB

Corsair CMK32GX4M2C3200C18 16GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

Corsair CMK32GX4M2C3200C18 16GB

需要考虑的原因
Corsair CMK32GX4M2C3200C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 -37% 更低的延时
更快的读取速度，GB/s

16.8 13.3

测试中的平均数值
更快的写入速度，GB/s

13.1 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Corsair CMK32GX4M2C3200C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 30
读取速度，GB/s

13.3 16.8
写入速度，GB/s

9.0 13.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2016 3337

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1K70QB0-CK0 8GB

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Patriot Memory (PDP Systems) PSD48G213381S 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMK32GX4M4B3866C18 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C16-8GVRB 8GB

G Skill Intl F4-3200C16-8GVRB 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMU32GX4M4C3400C16 8GB

Corsair CMU32GX4M4C3400C16 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Apacer Technology 78.D2GF2.4010B 16GB

Apacer Technology 78.D2GF2.4010B 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-2400C17-8GISM 8GB

G Skill Intl F4-2400C17-8GISM 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Avant Technology W6451U66J5213ND 4GB

Avant Technology W6451U66J5213ND 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB