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Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB

Samsung M471B5273DH0-CK0 4GB vs Crucial Technology BLS4G4D26BFSB.8FE 4GB

总分
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Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
Crucial Technology BLS4G4D26BFSB.8FE 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 41
    左右 -58% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 26
  • 读取速度，GB/s
    13.3 left arrow 17.7
  • 写入速度，GB/s
    9.0 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 3055

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMR32GX4M2C3000C15 16GB
Corsair CMR32GX4M2C3000C15 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905702-184.A00G 8GB
Kingston 9905702-184.A00G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK32GX4M4K3600C16 8GB
Corsair CMK32GX4M4K3600C16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston ACR26D4U9D8MH-16 16GB
Kingston ACR26D4U9D8MH-16 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Jinyu CL16-16-16 D4-2400 8GB
Jinyu CL16-16-16 D4-2400 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMW16GX4M1Z3600C18 16GB
Corsair CMW16GX4M1Z3600C18 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GTRS 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD16GX4M2A2400C14 8GB
Corsair CMD16GX4M2A2400C14 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Maxsun MSD48G30M3 8GB
Maxsun MSD48G30M3 8GB
内存RAM