Samsung M471B5273DH0-CK0 4GB vs Crucial Technology BLT16G4D26BFT4.C16FD 16GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

需要考虑的原因
Crucial Technology BLT16G4D26BFT4.C16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 41

左右 -3% 更低的延时
更快的读取速度，GB/s

15.4 13.3

测试中的平均数值
更快的写入速度，GB/s

12.7 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 40
读取速度，GB/s

13.3 15.4
写入速度，GB/s

9.0 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2016 2981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Super Talent F3200UA8G 8GB

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Micron Technology 72ASS4G72LZ-2G3A2 32GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Corsair CM4X8GF2400Z16K4 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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V-Color Technology Inc. TL48G30S8KGRGB15 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

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Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

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Kingston XRGM6C-MIE 16GB

Kingston XRGM6C-MIE 16GB