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Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB

Samsung M471B5273DH0-CK0 4GB vs Crucial Technology CT16G4DFRA32A.C8FB 16GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
Crucial Technology CT16G4DFRA32A.C8FB 16GB 需要考虑的原因
Crucial Technology CT16G4DFRA32A.C8FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 41
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 35
  • 读取速度，GB/s
    13.3 left arrow 18.7
  • 写入速度，GB/s
    9.0 left arrow 13.6
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 3423

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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AMD R5S38G1601U2S 8GB
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内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
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内存RAM
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G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
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内存RAM
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