Samsung M471B5273DH0-CK0 4GB vs Crucial Technology CT4G4DFS8213.8FA11 4GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

Crucial Technology CT4G4DFS8213.8FA11 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.8FA11 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 41

左右 -71% 更低的延时
更快的读取速度，GB/s

15.4 13.3

测试中的平均数值
更快的写入速度，GB/s

11.5 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 24
读取速度，GB/s

13.3 15.4
写入速度，GB/s

9.0 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2016 2534

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SF564128CJ8N6NNSEG 4GB

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

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G Skill Intl F5-6400J3239G16G 16GB

Ramaxel Technology RMUA5110ME78HAF-2666 8GB

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Golden Empire CL16-16-16 D4-2400 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

G Skill Intl F4-2400C15-8GNS 8GB

G Skill Intl F4-2400C15-8GNS 8GB