Samsung M471B5273DH0-CK0 4GB vs G Skill Intl F4-3600C19-8GSXKB 8GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

G Skill Intl F4-3600C19-8GSXKB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GSXKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

18.6 13.3

测试中的平均数值
更快的写入速度，GB/s

15.4 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

G Skill Intl F4-3600C19-8GSXKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

13.3 18.6
写入速度，GB/s

9.0 15.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2016 3519

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Crucial Technology CT4G4DFS8213.C8FAR2 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology BLS8G4D26BFSCK.8FD 8GB

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Team Group Inc. 16GB

Team Group Inc. 16GB

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Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CMK128GX4M4D3600C18 32GB

Corsair CMK128GX4M4D3600C18 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9905630-052.A00G 16GB

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