Samsung M471B5273DH0-CK0 4GB vs SK Hynix HMA41GR7AFR8N-TF 8GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

SK Hynix HMA41GR7AFR8N-TF 8GB

SK Hynix HMA41GR7AFR8N-TF 8GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 54

左右 24% 更低的延时
更快的读取速度，GB/s

13.3 10

测试中的平均数值
更快的写入速度，GB/s

9.0 8.5

测试中的平均数值

SK Hynix HMA41GR7AFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GR7AFR8N-TF 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

SK Hynix HMA41GR7AFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 54
读取速度，GB/s

13.3 10.0
写入速度，GB/s

9.0 8.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2016 2354

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-4300 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-3200C15-8GTZSK 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston KHX2400C1C14/16G 16GB

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PUSKILL DDR3 1600 8G 8GB

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Samsung V-GeN D4S16GL32A8TS 16GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB

Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB