Samsung M471B5273DH0-CK0 4GB vs SK Hynix HMA82GU6DJR8N-VK 16GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

SK Hynix HMA82GU6DJR8N-VK 16GB

SK Hynix HMA82GU6DJR8N-VK 16GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 43

左右 5% 更低的延时

SK Hynix HMA82GU6DJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GU6DJR8N-VK 16GB

报告一个错误

更快的读取速度，GB/s

14 13.3

测试中的平均数值
更快的写入速度，GB/s

12.3 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

SK Hynix HMA82GU6DJR8N-VK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 43
读取速度，GB/s

13.3 14.0
写入速度，GB/s

9.0 12.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2016 2867

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited KD48GU88C-26N1600 8GB

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Apacer Technology 78.CAGP7.C7C0B 8GB

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Kingston 99U5471-012.A00LF 4GB

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Micron Technology TEAMGROUP-UD4-3000 16GB

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Kingston 9965525-018.A00LF 4GB

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G Skill Intl F4-2133C15-8GFX 8GB

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Samsung M3 78T5663EH3-CF7 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Corsair CMT16GX4M2C3200C14 8GB

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Kingston 99U5474-037.A00LF 4GB

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Corsair CMK32GX4M4B3200C16 8GB

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Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB

Kingston 9965525-018.A00LF 4GB

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G Skill Intl F4-4000C16-8GTZR 8GB

Samsung M378B5173BH0-CH9 4GB

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A-DATA Technology DDR4 2666 2OZ 4GB

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