Samsung M471B5273DH0-YH9 4GB vs Samsung M471B5273DH0-YK0 4GB

总分

Samsung M471B5273DH0-YH9 4GB

Samsung M471B5273DH0-YH9 4GB

总分

Samsung M471B5273DH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

差异规格评论

差异

Samsung M471B5273DH0-YH9 4GB

需要考虑的原因
Samsung M471B5273DH0-YH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 32% 更低的延时

Samsung M471B5273DH0-YK0 4GB

需要考虑的原因
Samsung M471B5273DH0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

12.9 6.2

测试中的平均数值
更快的写入速度，GB/s

9.0 4.4

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-YH9 4GB

Samsung M471B5273DH0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 41
读取速度，GB/s

6.2 12.9
写入速度，GB/s

4.4 9.0
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

625 1958

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273DH0-YH9 4GB

Samsung M471B5273DH0-YH9 4GB

Samsung M471B5273DH0-YK0 4GB

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Kingston 99U5474-010.A00LF 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMK32GX4M2A2400C14 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Kingston 9905295-025.B00LF 1GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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Corsair CMD64GX4M4C3200C16 16GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB