Samsung M471B5273EB0-CK0 4GB vs Corsair CM4X32GC3200C16K2E 32GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Corsair CM4X32GC3200C16K2E 32GB

Corsair CM4X32GC3200C16K2E 32GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 41

左右 2% 更低的延时

Corsair CM4X32GC3200C16K2E 32GB

需要考虑的原因
Corsair CM4X32GC3200C16K2E 32GB

报告一个错误

更快的读取速度，GB/s

13.5 12.3

测试中的平均数值
更快的写入速度，GB/s

12.7 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Corsair CM4X32GC3200C16K2E 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 41
读取速度，GB/s

12.3 13.5
写入速度，GB/s

8.9 12.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 3114

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-174.A00LF 2GB

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Crucial Technology CT102464BA160B.M16 8GB

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Crucial Technology CB16GS2400.C16J 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Crucial Technology BL16G32C16U4W.16FE 16GB

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G Skill Intl F4-4600C18-8GTZR 8GB

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Corsair CMK16GX4M1A2666C16 16GB

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Patriot Memory (PDP Systems) PSD416G26662 16GB

Kingston 9905469-153.A00LF 4GB

Kingston 9905469-153.A00LF 4GB

Kingston KHX3600C17D4/16GX 16GB

Kingston KHX3600C17D4/16GX 16GB

Kingston 99U5403-036.A00G 4GB

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Kingston 9965640-016.A00G 32GB

Kingston 9965640-016.A00G 32GB

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G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB