Samsung M471B5273EB0-CK0 4GB vs Corsair CMWB8G1L3200K16W4 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Corsair CMWB8G1L3200K16W4 8GB

Corsair CMWB8G1L3200K16W4 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Corsair CMWB8G1L3200K16W4 8GB

需要考虑的原因
Corsair CMWB8G1L3200K16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 -54% 更低的延时
更快的读取速度，GB/s

18.9 12.3

测试中的平均数值
更快的写入速度，GB/s

17.3 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Corsair CMWB8G1L3200K16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 26
读取速度，GB/s

12.3 18.9
写入速度，GB/s

8.9 17.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 3983

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M391B5673EH1-CH9 2GB

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Micron Technology 4ATF51264AZ-3G2J1 4GB

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Corsair CM4X4GF2133C13K4 4GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

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G Skill Intl F4-3600C16-8GTZRC 8GB