Samsung M471B5273EB0-CK0 4GB vs Crucial Technology BLE16G4D30AEEA.K16FB 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

需要考虑的原因
Crucial Technology BLE16G4D30AEEA.K16FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

20 40

左右 -100% 更低的延时
更快的读取速度，GB/s

18.9 12.3

测试中的平均数值
更快的写入速度，GB/s

12.6 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 20
读取速度，GB/s

12.3 18.9
写入速度，GB/s

8.9 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 3244

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

Kingston 2GB-DDR2 800Mhz 2GB

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Apacer Technology 78.CAGQE.C750B 8GB

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Crucial Technology CT4G4DFS8213.M8FB 4GB

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Corsair CML8GX3M2A1866C9 4GB

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Corsair CMK64GX4M4B3600C18 16GB

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G Skill Intl F4-4000C18-8GTZ 8GB

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A-DATA Technology VDQVE1B16 2GB

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Kingston 9905700-011.A00G 8GB

Kingston 9905700-011.A00G 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Samsung M471B1G73QH0-YK0 8GB

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G Skill Intl F4-3200C14-16GTZ 16GB

G Skill Intl F4-3200C14-16GTZ 16GB

Kingston 9905403-515.A00LF 8GB

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Corsair MK16GX44B3000C15 4GB

Corsair MK16GX44B3000C15 4GB