Samsung M471B5273EB0-CK0 4GB vs Crucial Technology BLT8G4D26AFTA.16FAD 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

需要考虑的原因
Crucial Technology BLT8G4D26AFTA.16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 40

左右 -8% 更低的延时
更快的读取速度，GB/s

15.5 12.3

测试中的平均数值
更快的写入速度，GB/s

12.5 8.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 37
读取速度，GB/s

12.3 15.5
写入速度，GB/s

8.9 12.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1789 2813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905622-075.A00G 8GB

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Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

Samsung M471B5173QH0-YK0 4GB

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Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB